EGPT
1N5408 general purpose rectifier diode
- Forward Voltage Drop: 1V (at 3A)
- Forward current: 3A
- Peak Forward Current: 200A
- Reverse Voltage: 1000V
- Available in DO-201 Package
Original price was: ₹18.₹4Current price is: ₹4. (inc. GST)
The 1N5408 rectifier diode is a power rectifier diode with a maximum forward current of 3A and voltage drop of 1V. It is commonly used in Switching or rectifying applications. The specifications of the 1N5408 diode are:
- Forward Voltage Drop: 1V (at 3A)
- Forward current: 3A
- Peak Forward Current: 200A
- Reverse Voltage: 1000V
- Available in DO-201 Package
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- Operating Voltage range: 3.0 V to 3.5 V
- Current through LED: 300mA to 350mA
- Maximum reverse voltage between ANODE and CATHODE: 5 V
- Maximum Power dissipation: 1Watt
- Operating temperature: – 40 ºC to +80 ºC
- Color: White
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- material Type:Â Fluoro-silicon
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Specifications
- Bi-Polar high current NPN Transistor
- DC Current Gain (hFE)is 100 to 300
- Continuous Collector current (IC) is 800mA
- Emitter Base Voltage (VBE) is 6V
- Collector-Emitter Voltage (VCE) is 40V
- Base Current (IB) is 5mA maximum
- Available in To-92 Package
- Rise Time 25nSec, Fall Time 60nSec
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- Capacitance: 10uF
- Maximum Voltage: 50 Volts
- Tolerance: ??15%
- Capacitor Type: Radial Through Hole Electrolytic
- Polarization: Yes. Line with ???-??? denotes negative lead
- Max Temperature: +85??C
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- Continuous Drain Current (ID) is 49A at 25°C
- Pulsed Drain Current (ID-peak) is 160A
- Minimum Gate threshold voltage (VGS-th) is 2V
- Maximum Gate threshold voltage (VGS-th) is 4V
- Gate-Source Voltage is (VGS) is ±20V (max)
- Maximum Drain-Source Voltage (VDS) is 55V
- Available in To-220 package
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- Max Temperature: +85°C
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- ±5% Tolerance
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- Package: Axial
- Mounting Feature: Through-hole
- Composition: Carbon Film Type
- Excellent Heat and Humidity Withstand Performance
- Long Life
- Automatically insertable
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Specifications
- Forward Voltage: 2.85V
- Size: 5mm
- Color: Blue
- Diode Emitting Light
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